STP5NK100Z, транзистор полевой n-канальный 1kв 3.5а 125вт

КОД: STP5NK100Z

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Описание

Описание STP5NK100Z

The STP5NK100Z is a SuperMESH3™ N-channel Power MOSFET features minimized gate charge. This new SuperMESH™ Power MOSFET is the result of further design improvements on ST's well-established strip based PowerMESH™ layout. In addition to significantly lower ON-resistance, the device offers superior dV/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ device further complements an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.

• Extremely high dV/dt capability
• 100% Avalanche tested
• Very good manufacturing repeatability

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Product Category	Power MOSFET
Configuration	Single
Process Technology	SuperMESH
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	1000
Maximum Gate Source Voltage (V)	±30
Maximum Continuous Drain Current (A)	3.5
Maximum Drain Source Resistance (mOhm)	3700@10V
Typical Gate Charge @ Vgs (nC)	42@10V
Typical Gate Charge @ 10V (nC)	42
Typical Input Capacitance @ Vds (pF)	1154@25V
Maximum Power Dissipation (mW)	125000
Typical Fall Time (ns)	19
Typical Rise Time (ns)	7.7
Typical Turn-Off Delay Time (ns)	51.5
Typical Turn-On Delay Time (ns)	22.5
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Packaging	Tube
Automotive	No
Pin Count	3
Supplier Package	TO-220
Standard Package Name	TO-220
Military	No
Mounting	Through Hole
Package Height	9.15(Max)
Package Length	10.4(Max)
Package Width	4.6(Max)
PCB changed	3
Tab	Tab
Lead Shape	Through Hole
Вес, г	2.8

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