IRLR6225TRPBF, транзистор полевой 20в 100a 4.0мом 2.5в

КОД: IRLR6225TRPBF

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Описание

Описание IRLR6225TRPBF

N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Maximum Operating Temperature	+150 °C
Maximum Continuous Drain Current	100 A
Package Type	DPAK (TO-252)
Maximum Power Dissipation	63 W
Mounting Type	Surface Mount
Width	7.49mm
Forward Transconductance	205s
Height	2.39mm
Dimensions	6.73 x 7.49 x 2.39mm
Transistor Material	Si
Number of Elements per Chip	1
Length	6.73mm
Transistor Configuration	Single
Typical Turn-On Delay Time	9.7 ns
Brand	Infineon
Typical Turn-Off Delay Time	63 ns
Series	HEXFET
Minimum Operating Temperature	-55 °C
Maximum Gate Threshold Voltage	1.1V
Minimum Gate Threshold Voltage	0.5V
Maximum Drain Source Resistance	5.2 mΩ
Maximum Drain Source Voltage	20 V
Pin Count	3
Category	Power MOSFET
Typical Gate Charge @ Vgs	48 nC @ 4.5 V
Channel Mode	Enhancement
Typical Input Capacitance @ Vds	3770 pF @ 10 V
Channel Type	N
Maximum Gate Source Voltage	-12 V, +12 V
Forward Diode Voltage	1.2V
Вес, г	0.4

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