IRFS4115TRLPBF, транзистор полевой n-канальный 150в 195a

КОД: IRFS4115TRLPBF

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Описание

Описание IRFS4115TRLPBF

N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Maximum Operating Temperature	+175 °C
Maximum Continuous Drain Current	195 A
Package Type	D2PAK (TO-263)
Maximum Power Dissipation	375 W
Mounting Type	Surface Mount
Width	11.3mm
Forward Transconductance	97s
Height	4.83mm
Dimensions	10.67 x 11.3 x 4.83mm
Transistor Material	Si
Number of Elements per Chip	1
Length	10.67mm
Transistor Configuration	Single
Typical Turn-On Delay Time	18 ns
Brand	Infineon
Typical Turn-Off Delay Time	41 ns
Series	HEXFET
Minimum Operating Temperature	-55 °C
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Drain Source Resistance	12.1 mΩ
Maximum Drain Source Voltage	150 V
Pin Count	3
Category	Power MOSFET
Typical Gate Charge @ Vgs	77 nC @ 10 V
Channel Mode	Enhancement
Typical Input Capacitance @ Vds	5270 pF @ 50 V
Channel Type	N
Maximum Gate Source Voltage	-20 V, +20 V
Forward Diode Voltage	1.3V
Вес, г	2.5

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