IRFL4310TRPBF, транзистор полевой n-канальный 100в 1.6а 2.1вт
Описание
Описание IRFL4310TRPBF
The IRFL4310TRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
• Dynamic dV/dt rating
• Ease of paralleling
• Advanced process technology
• Low static drain-to-source ON-resistance
| Структура | n-канал |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1.6 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20 |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.2 ом при 1.6a, 10в |
| Максимальная рассеиваемая мощность Pси макс..Вт | 3.1 |
| Крутизна характеристики, S | 1.5 |
| Корпус | sot223 |
| Пороговое напряжение на затворе | 4 |
| Вес, г | 0.39 |