IPP032N06N3GXKSA1, транзистор полевой n-канальный 60в 120a 188вт 3-pin(3+tab) to-220 туба, coolmos

IPP032N06N3GXKSA1

Описание

Описание IPP032N06N3GXKSA1

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Maximum Operating Temperature+175 °C
Number of Elements per Chip1
Length10.36mm
Transistor ConfigurationSingle
BrandInfineon
Maximum Continuous Drain Current120 A
Package TypeTO-220
Maximum Power Dissipation188 W
SeriesOptiMOS 3
Mounting TypeThrough Hole
Minimum Operating Temperature-55 °C
Width4.57mm
Maximum Gate Threshold Voltage4V
Height15.95mm
Minimum Gate Threshold Voltage2V
Maximum Drain Source Resistance3.2 mΩ
Maximum Drain Source Voltage60 V
Pin Count3
Typical Gate Charge @ Vgs124 nC @ 10 V
Transistor MaterialSi
Channel ModeEnhancement
Channel TypeN
Maximum Gate Source Voltage-20 V, +20 V
Forward Diode Voltage1.2V
Вес, г2.5

Особенности

Вес брутто
2.97 г
Код товара
420714
Корпус
TO-220
Краткое описание
MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube Транзистор полевой N-канальный 60В 120A 188Вт 3-Pin(3+Tab) TO-220 туба, CoolMOS
Нормоупаковка
50 шт
Остаток под заказ
0 шт
Тип упаковки
Tube (туба)
Файлы
Https://www.promelec.ru/fs/sources/2d/82/03/60/c13dfdfca98ac1380cc0773c.pdf
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