FQA9N90C_F109, транзистор полевой n-канальный 900в 9а 280вт

КОД: FQA9N90C_F109

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Описание

Описание FQA9N90C_F109

The FQA9N90C_F109 is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.

• Low gate charge (45nC)
• Low Crss (14pF)
• 100% avalanche tested

Base Product Number	FQA9 ->
Current - Continuous Drain (Id) @ 25В°C	9A (Tc)
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	2730pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-3P-3, SC-65-3
Power Dissipation (Max)	280W (Tc)
Rds On (Max) @ Id, Vgs	1.4Ohm @ 4.5A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	QFETВ® ->
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	5V @ 250ВµA
Вес, г	6.5

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