ADR421ARZ, источник опорного напряжения, 2.5 в
Описание
Описание ADR421ARZ
The ADR421ARZ is an ultra-precision, second generation eXtra implanted junction FET (XFET) Voltage Reference featuring low noise, high accuracy and excellent long-term stability in SOIC and MSOP footprints. Patented temperature drift curvature correction technique and XFET technology minimize nonlinearity of the voltage change with temperature. The XFET architecture offers superior accuracy and thermal hysteresis to the band gap references. It also operates at lower power and lower supply headroom than the buried Zener references. The trim terminal can also be used to adjust the output voltage over a ±0.5% range without compromising any other performance.
• Low noise (0.1 to 10Hz)
• 3ppm/°C Low temperature coefficient
• 50ppm/1000 hours Long-term stability
• 70ppm/mA Load regulation
• 35ppm/V Line regulation
• 40ppm Typical low hysteresis
• 0.5mA Maximum quiescent current
• 10mA High output current
| Тип ИОН | последовательный |
| Тип выхода | фиксированный |
| Выходное напряжение | 2.5 В |
| Выходной ток | 10 мА |
| Точность | ±0.12 % |
| Входное напряжение | 4.5…18 В |
| Ток потребления | 600 мкА |
| Рабочая температура | -40…+125 C (TA) |
| Корпус | SOIC-8 (0.154") |
| Вес, г | 0.15 |