IRF1010ZSTRLPBF, транзистор полевой n-канальный 55в 75a

КОД: IRF1010ZSTRLPBF

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Описание

Описание IRF1010ZSTRLPBF

N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Maximum Operating Temperature	+175 °C
Maximum Continuous Drain Current	94 A
Package Type	D2PAK (TO-263)
Maximum Power Dissipation	140 W
Mounting Type	Surface Mount
Width	11.3mm
Forward Transconductance	33s
Height	4.83mm
Dimensions	10.67 x 11.3 x 4.83mm
Transistor Material	Si
Number of Elements per Chip	1
Length	10.67mm
Transistor Configuration	Single
Typical Turn-On Delay Time	18 ns
Brand	Infineon
Typical Turn-Off Delay Time	36 ns
Series	HEXFET
Minimum Operating Temperature	-55 °C
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Drain Source Resistance	7.5 mΩ
Maximum Drain Source Voltage	55 V
Pin Count	3
Category	Power MOSFET
Typical Gate Charge @ Vgs	63 nC @ 10 V
Channel Mode	Enhancement
Typical Input Capacitance @ Vds	2840 pF @ 25 V
Channel Type	N
Maximum Gate Source Voltage	-20 V, +20 V
Forward Diode Voltage	1.3V
Вес, г	2.5

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