FDA59N25, транзистор полевой n-канальный 250в 59а 390вт

КОД: FDA59N25

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Описание

Описание FDA59N25

The FDA59N25 is an UniFET™ N-channel MOSFET produced using Fairchild Semiconductor's high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

• 63nC Typical low gate charge
• 70pF Typical low Crss
• 100% Avalanche tested

Base Product Number	FDA59 ->
Current - Continuous Drain (Id) @ 25В°C	59A (Tc)
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	4020pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-3P-3, SC-65-3
Power Dissipation (Max)	392W (Tc)
Rds On (Max) @ Id, Vgs	49mOhm @ 29.5A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	UniFETв„ў ->
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	5V @ 250ВµA
Вес, г	6.5

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