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Цена: по запросу
Цена: по запросу
Описание IRFR9120NTRLPBF Вес, г 0.4
Описание IRFR9214TRPBF MOSFET, P, D-PAK Transistor Type MOSFET Transistor Polarity P Voltage, Vds Typ -250V Current, Id Cont 2.7A Resistance, Rds On 3ohm Voltage, Vgs Rds on Measurement -10V Voltage, Vgs th Typ -4V Case Style DPAK Termination Type SMD Alternate Case Style TO-252 Current,...
Описание IRFR9310PBF The IRFR9310PBF is a -400V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, SiHFU...
Описание IRFRC20PBF The IRFRC20PBF is a 600V N-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, SiHFU series)...
Описание IRFS4115TRLPBF N-Channel Power MOSFET 150V to 600V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the...
Описание IRFS4229TRLPBF MOSFET, N-CH, 250V, 45A, TO-263-3 Корпус TO263, Конфигурация и полярность N, Максимальное напряжение сток-исток 250 В, Ток стока номинальный при 25°C, без учета ограничений корпуса 45 А, Сопротивление открытого канала (мин) 48 мОм Вес, г 2.5
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