Дискретные полупроводники

Описание IRFR4615TRLPBF The IRFR4615TRLPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized...
Цена: по запросу
Цена: по запросу
Описание IRFR9120NTRLPBF Вес, г 0.4
Описание IRFR9214TRPBF MOSFET, P, D-PAK Transistor Type MOSFET Transistor Polarity P Voltage, Vds Typ -250V Current, Id Cont 2.7A Resistance, Rds On 3ohm Voltage, Vgs Rds on Measurement -10V Voltage, Vgs th Typ -4V Case Style DPAK Termination Type SMD Alternate Case Style TO-252 Current,...
Описание IRFR9310PBF The IRFR9310PBF is a -400V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, SiHFU...
Описание IRFRC20PBF The IRFRC20PBF is a 600V N-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, SiHFU series)...
Описание IRFS4115TRLPBF N-Channel Power MOSFET 150V to 600V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the...
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